Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Width
1.7mm
Height
1.3mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
SR 33.75
SR 1.35 Each (Supplied as a Tape) (ex VAT)
SR 38.81
SR 1.552 Each (Supplied as a Tape) (inc. VAT)
Standard
25
SR 33.75
SR 1.35 Each (Supplied as a Tape) (ex VAT)
SR 38.81
SR 1.552 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Width
1.7mm
Height
1.3mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details


