Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
SR 42.00
SR 0.42 Each (In a Pack of 100) (ex VAT)
SR 48.30
SR 0.483 Each (In a Pack of 100) (inc. VAT)
Standard
100
SR 42.00
SR 0.42 Each (In a Pack of 100) (ex VAT)
SR 48.30
SR 0.483 Each (In a Pack of 100) (inc. VAT)
Standard
100
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Product details