Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
26.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Typical Gate Charge @ Vgs
26.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details