Technical Document
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Country of Origin
China
Product details
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc

SR 520.00
SR 0.26 Each (On a Reel of 2000) (ex VAT)
SR 598.00
SR 0.299 Each (On a Reel of 2000) (inc. VAT)
2000
SR 520.00
SR 0.26 Each (On a Reel of 2000) (ex VAT)
SR 598.00
SR 0.299 Each (On a Reel of 2000) (inc. VAT)
2000
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Technical Document
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Country of Origin
China
Product details
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
