P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

RS Stock No.: 178-3950Brand: Vishay SiliconixManufacturers Part No.: SQD40031EL_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Country of Origin

Taiwan, Province Of China

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SR 74.40

SR 7.44 Each (In a Pack of 10) (ex VAT)

SR 85.56

SR 8.556 Each (In a Pack of 10) (inc. VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10SR 74.40
20SR 148.80
30SR 223.20
40SR 297.60
50SR 372.00
60SR 446.40
70SR 520.80
80SR 595.20
90SR 669.60
100SR 744.00
110SR 818.40
120SR 892.80
130SR 967.20
140SR 1,041.60
150SR 1,116.00

SR 74.40

SR 7.44 Each (In a Pack of 10) (ex VAT)

SR 85.56

SR 8.556 Each (In a Pack of 10) (inc. VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10SR 74.40
20SR 148.80
30SR 223.20
40SR 297.60
50SR 372.00
60SR 446.40
70SR 520.80
80SR 595.20
90SR 669.60
100SR 744.00
110SR 818.40
120SR 892.80
130SR 967.20
140SR 1,041.60
150SR 1,116.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

6.22mm

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more