N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

RS Stock No.: 178-3698Brand: Vishay SiliconixManufacturers Part No.: SiSS02DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

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Stock information temporarily unavailable.

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SR 9,030.00

SR 3.01 Each (On a Reel of 3000) (ex VAT)

SR 10,384.50

SR 3.462 Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3

3000

Available in multiples of 3000
3000SR 9,030.00
6000SR 18,060.00
9000SR 27,090.00
12000SR 36,120.00
15000SR 45,150.00
18000SR 54,180.00
21000SR 63,210.00
24000SR 72,240.00
27000SR 81,270.00
30000SR 90,300.00
33000SR 99,330.00
36000SR 108,360.00
39000SR 117,390.00
42000SR 126,420.00
45000SR 135,450.00

SR 9,030.00

SR 3.01 Each (On a Reel of 3000) (ex VAT)

SR 10,384.50

SR 3.462 Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 80 A, 25 V, 8-Pin 1212 Vishay Siliconix SiSS02DN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000SR 9,030.00
6000SR 18,060.00
9000SR 27,090.00
12000SR 36,120.00
15000SR 45,150.00
18000SR 54,180.00
21000SR 63,210.00
24000SR 72,240.00
27000SR 81,270.00
30000SR 90,300.00
33000SR 99,330.00
36000SR 108,360.00
39000SR 117,390.00
42000SR 126,420.00
45000SR 135,450.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

25 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more