N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S

RS Stock No.: 133-2810Brand: ToshibaManufacturers Part No.: TPH8R903NL,LQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Height

0.95mm

Forward Diode Voltage

1.2V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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SR 18.20

SR 0.91 Each (In a Pack of 20) (ex VAT)

SR 20.93

SR 1.046 Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S

20

Available in multiples of 20
20SR 18.20
40SR 36.40
60SR 54.60
80SR 72.80
100SR 91.00
120SR 109.20
140SR 127.40
160SR 145.60
180SR 163.80
200SR 182.00
220SR 200.20
240SR 218.40
260SR 236.60
280SR 254.80
300SR 273.00

SR 18.20

SR 0.91 Each (In a Pack of 20) (ex VAT)

SR 20.93

SR 1.046 Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S
Stock information temporarily unavailable.

20

Available in multiples of 20
20SR 18.20
40SR 36.40
60SR 54.60
80SR 72.80
100SR 91.00
120SR 109.20
140SR 127.40
160SR 145.60
180SR 163.80
200SR 182.00
220SR 200.20
240SR 218.40
260SR 236.60
280SR 254.80
300SR 273.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Height

0.95mm

Forward Diode Voltage

1.2V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more