STMicroelectronics STripFET H7 N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL110N10F7

RS Stock No.: 786-3726Brand: STMicroelectronicsManufacturers Part No.: STL110N10F7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

STripFET H7

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.4mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

6.35mm

Transistor Material

Si

Height

0.95mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

SR 79.40

SR 15.88 Each (Supplied as a Tape) (ex VAT)

SR 91.31

SR 18.262 Each (Supplied as a Tape) (inc. VAT)

STMicroelectronics STripFET H7 N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL110N10F7
Select packaging type

SR 79.40

SR 15.88 Each (Supplied as a Tape) (ex VAT)

SR 91.31

SR 18.262 Each (Supplied as a Tape) (inc. VAT)

STMicroelectronics STripFET H7 N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL110N10F7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

STripFET H7

Package Type

PowerFLAT 5 x 6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.4mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

6.35mm

Transistor Material

Si

Height

0.95mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ H7 Series, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more