N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E

RS Stock No.: 829-0627Brand: STMicroelectronicsManufacturers Part No.: PD55015-E
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+165 °C

Length

9.6mm

Width

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Height

3.6mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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SR 94.61

Each (ex VAT)

SR 108.80

Each (inc. VAT)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 94.61
2SR 189.22
3SR 283.83
4SR 378.44
5SR 473.05
6SR 567.66
7SR 662.27
8SR 756.88
9SR 851.49
10SR 946.10
11SR 1,040.71
12SR 1,135.32
13SR 1,229.93
14SR 1,324.54
15SR 1,419.15

SR 94.61

Each (ex VAT)

SR 108.80

Each (inc. VAT)

N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO STMicroelectronics PD55015-E
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 94.61
2SR 189.22
3SR 283.83
4SR 378.44
5SR 473.05
6SR 567.66
7SR 662.27
8SR 756.88
9SR 851.49
10SR 946.10
11SR 1,040.71
12SR 1,135.32
13SR 1,229.93
14SR 1,324.54
15SR 1,419.15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+165 °C

Length

9.6mm

Width

9.5mm

Transistor Material

Si

Typical Power Gain

14 dB

Height

3.6mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more