Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-45 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40
Transistor Configuration
Single
Maximum Collector Base Voltage
45 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
Malaysia
Product details
General Purpose PNP Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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SR 58.50
SR 1.17 Each (In a Tube of 50) (ex VAT)
SR 67.28
SR 1.346 Each (In a Tube of 50) (inc. VAT)
50
SR 58.50
SR 1.17 Each (In a Tube of 50) (ex VAT)
SR 67.28
SR 1.346 Each (In a Tube of 50) (inc. VAT)
50
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-45 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40
Transistor Configuration
Single
Maximum Collector Base Voltage
45 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
Malaysia
Product details
General Purpose PNP Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.