onsemi 2N6045G NPN Darlington Transistor, 8 A 100 V HFE:2500, 3-Pin TO-220
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2500
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Height
4.82mm
Width
10.28mm
Maximum Power Dissipation
75 W
Minimum Operating Temperature
-65 °C
Dimensions
15.75 x 10.28 x 4.82mm
Length
15.75mm
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SR 4.83
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SR 4.83
Each (In a Tube of 50) (ex VAT)
SR 5.554
Each (In a Tube of 50) (inc. VAT)
50
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
8 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2500
Maximum Base Emitter Saturation Voltage
4.5 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Height
4.82mm
Width
10.28mm
Maximum Power Dissipation
75 W
Minimum Operating Temperature
-65 °C
Dimensions
15.75 x 10.28 x 4.82mm
Length
15.75mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products