Technical Document
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
1.2 A
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
6
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
10000
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Height
1mm
Width
1.7mm
Maximum Power Dissipation
700 mW
Minimum Operating Temperature
-55 °C
Dimensions
3 x 1.7 x 1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Product details
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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P.O.A.
3000
P.O.A.
3000
Technical Document
Specifications
Brand
ON SemiconductorTransistor Type
NPN
Maximum Continuous Collector Current
1.2 A
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
6
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
10000
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Height
1mm
Width
1.7mm
Maximum Power Dissipation
700 mW
Minimum Operating Temperature
-55 °C
Dimensions
3 x 1.7 x 1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Product details
Darlington NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.