P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1

RS Stock No.: 753-3166Brand: InfineonManufacturers Part No.: SPB80P06P G
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

115 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Minimum Operating Temperature

-55 °C

Height

4.57mm

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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SR 10.12

SR 10.12 Each (ex VAT)

SR 11.64

SR 11.64 Each (inc. VAT)

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 10.12
2SR 20.24
3SR 30.36
4SR 40.48
5SR 50.60
6SR 60.72
7SR 70.84
8SR 80.96
9SR 91.08
10SR 101.20
11SR 111.32
12SR 121.44
13SR 131.56
14SR 141.68
15SR 151.80

SR 10.12

SR 10.12 Each (ex VAT)

SR 11.64

SR 11.64 Each (inc. VAT)

P-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 10.12
2SR 20.24
3SR 30.36
4SR 40.48
5SR 50.60
6SR 60.72
7SR 70.84
8SR 80.96
9SR 91.08
10SR 101.20
11SR 111.32
12SR 121.44
13SR 131.56
14SR 141.68
15SR 151.80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Transistor Material

Si

Typical Gate Charge @ Vgs

115 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Minimum Operating Temperature

-55 °C

Height

4.57mm

Product details

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more