Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
China
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SR 0.30
Each (On a Reel of 3000) (ex VAT)
SR 0.345
Each (On a Reel of 3000) (inc. VAT)
3000
SR 0.30
Each (On a Reel of 3000) (ex VAT)
SR 0.345
Each (On a Reel of 3000) (inc. VAT)
3000
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
China