Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.15 x 10.4 x 4.6mm
Product details
PNP Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
SR 141.50
SR 2.83 Each (In a Tube of 50) (ex VAT)
SR 162.72
SR 3.254 Each (In a Tube of 50) (inc. VAT)
50
SR 141.50
SR 2.83 Each (In a Tube of 50) (ex VAT)
SR 162.72
SR 3.254 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.15 x 10.4 x 4.6mm
Product details
PNP Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.