Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
SR 74.15
SR 14.83 Each (In a Pack of 5) (ex VAT)
SR 85.27
SR 17.054 Each (In a Pack of 5) (inc. VAT)
Standard
5
SR 74.15
SR 14.83 Each (In a Pack of 5) (ex VAT)
SR 85.27
SR 17.054 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Standard
5
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.2 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Height
1.04mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products