Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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SR 35.10
SR 7.02 Each (In a Pack of 5) (ex VAT)
SR 40.36
SR 8.073 Each (In a Pack of 5) (inc. VAT)
5
SR 35.10
SR 7.02 Each (In a Pack of 5) (ex VAT)
SR 40.36
SR 8.073 Each (In a Pack of 5) (inc. VAT)
5
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products