STMicroelectronics N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6

RS Stock No.: 192-4899PBrand: STMicroelectronicsManufacturers Part No.: STL45N60DM6
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

8.1mm

Length

8.1mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

0.9mm

Country of Origin

China

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

STMicroelectronics N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

8.1mm

Length

8.1mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

0.9mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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