onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

RS Stock No.: 181-1859Brand: onsemiManufacturers Part No.: FDP4D5N10C
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.67mm

Length

10.36mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

15.21mm

Country of Origin

China

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Stock information temporarily unavailable.

SR 13,376.00

SR 16.72 Each (In a Tube of 800) (ex VAT)

SR 15,382.40

SR 19.228 Each (In a Tube of 800) (inc. VAT)

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C

800

Available in multiples of 800
800SR 13,376.00
1600SR 26,752.00
2400SR 40,128.00
3200SR 53,504.00
4000SR 66,880.00
4800SR 80,256.00
5600SR 93,632.00
6400SR 107,008.00
7200SR 120,384.00
8000SR 133,760.00
8800SR 147,136.00
9600SR 160,512.00
10400SR 173,888.00
11200SR 187,264.00
12000SR 200,640.00

SR 13,376.00

SR 16.72 Each (In a Tube of 800) (ex VAT)

SR 15,382.40

SR 19.228 Each (In a Tube of 800) (inc. VAT)

onsemi N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 FDP4D5N10C
Stock information temporarily unavailable.

800

Available in multiples of 800
800SR 13,376.00
1600SR 26,752.00
2400SR 40,128.00
3200SR 53,504.00
4000SR 66,880.00
4800SR 80,256.00
5600SR 93,632.00
6400SR 107,008.00
7200SR 120,384.00
8000SR 133,760.00
8800SR 147,136.00
9600SR 160,512.00
10400SR 173,888.00
11200SR 187,264.00
12000SR 200,640.00

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

4.67mm

Length

10.36mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

15.21mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more