Nexperia N-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSN20BKR

RS Stock No.: 136-4845PBrand: NexperiaManufacturers Part No.: BSN20BKR
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Technical Document

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

60 V

Series

BSN20BK

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

0.49 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Product details

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Each (Supplied on a Reel) (ex VAT)

Nexperia N-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSN20BKR
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300P.O.A.
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500P.O.A.
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Nexperia N-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSN20BKR
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

60 V

Series

BSN20BK

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

0.49 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Product details

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more