Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

RS Stock No.: 206-9726Brand: ToshibaManufacturers Part No.: TK090N65Z,S1F(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090N65Z

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

SR 106.10

SR 53.05 Each (In a Pack of 2) (ex VAT)

SR 122.02

SR 61.008 Each (In a Pack of 2) (inc. VAT)

Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

SR 106.10

SR 53.05 Each (In a Pack of 2) (ex VAT)

SR 122.02

SR 61.008 Each (In a Pack of 2) (inc. VAT)

Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

TK090N65Z

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more