Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si
SR 2,250.00
SR 0.75 Each (On a Reel of 3000) (ex VAT)
SR 2,587.50
SR 0.862 Each (On a Reel of 3000) (inc. VAT)
3000
SR 2,250.00
SR 0.75 Each (On a Reel of 3000) (ex VAT)
SR 2,587.50
SR 0.862 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2390000 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si