onsemi UniFET N-Channel MOSFET, 51 A, 250 V, 3-Pin TO-220AB FDP51N25

RS Stock No.: 671-4843PBrand: onsemiManufacturers Part No.: FDP51N25
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220AB

Series

UniFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

320 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

55 nC @ 10 V

Width

4.83mm

Height

9.4mm

Minimum Operating Temperature

-55 °C

Product details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

Each (Supplied in a Tube) (ex VAT)

onsemi UniFET N-Channel MOSFET, 51 A, 250 V, 3-Pin TO-220AB FDP51N25
Select packaging type

P.O.A.

Each (Supplied in a Tube) (ex VAT)

onsemi UniFET N-Channel MOSFET, 51 A, 250 V, 3-Pin TO-220AB FDP51N25

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Select packaging type

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220AB

Series

UniFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

320 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

55 nC @ 10 V

Width

4.83mm

Height

9.4mm

Minimum Operating Temperature

-55 °C

Product details

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more