IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

RS Stock No.: 194-760Brand: IXYSManufacturers Part No.: IXGH6N170
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.46mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

SR 77.26

SR 77.26 Each (ex VAT)

SR 88.85

SR 88.85 Each (inc. VAT)

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole

1

Available in multiples of 1
1SR 77.26
2SR 154.52
3SR 231.78
4SR 309.04
5SR 386.30
6SR 463.56
7SR 540.82
8SR 618.08
9SR 695.34
10SR 772.60
11SR 849.86
12SR 927.12
13SR 1,004.38
14SR 1,081.64
15SR 1,158.90

SR 77.26

SR 77.26 Each (ex VAT)

SR 88.85

SR 88.85 Each (inc. VAT)

IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole
Stock information temporarily unavailable.

1

Available in multiples of 1
1SR 77.26
2SR 154.52
3SR 231.78
4SR 309.04
5SR 386.30
6SR 463.56
7SR 540.82
8SR 618.08
9SR 695.34
10SR 772.60
11SR 849.86
12SR 927.12
13SR 1,004.38
14SR 1,081.64
15SR 1,158.90

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.46mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in