Diodes Inc Dual N/P-Channel MOSFET, 280 mA, 620 mA, 60 V, 6-Pin SOT-563 DMG1029SV-7
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
280 mA, 620 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.7 Ω, 6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.25mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
1.7mm
Typical Gate Charge @ Vgs
0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
280 mA, 620 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.7 Ω, 6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.25mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
1.7mm
Typical Gate Charge @ Vgs
0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products