Technical Document
Specifications
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Maximum Collector Emitter Saturation Voltage
2 V
Product details
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
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P.O.A.
Production pack (Tube)
5
P.O.A.
Production pack (Tube)
5
Technical Document
Specifications
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Maximum Collector Emitter Saturation Voltage
2 V
Product details