N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3

RS Stock No.: 200-6856Brand: VishayManufacturers Part No.: SiR680ADP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

125 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Pin Count

8

Maximum Drain Source Resistance

0.0035 Ω, 0.00288 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

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SR 6.68

Each (On a Reel of 3000) (ex VAT)

SR 7.682

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3

3000

Available in multiples of 3000
3000SR 20,040.00
6000SR 40,080.00
9000SR 60,120.00
12000SR 80,160.00
15000SR 100,200.00
18000SR 120,240.00
21000SR 140,280.00
24000SR 160,320.00
27000SR 180,360.00
30000SR 200,400.00
33000SR 220,440.00
36000SR 240,480.00
39000SR 260,520.00
42000SR 280,560.00
45000SR 300,600.00

SR 6.68

Each (On a Reel of 3000) (ex VAT)

SR 7.682

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 125 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SiR680ADP-T1-RE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000SR 20,040.00
6000SR 40,080.00
9000SR 60,120.00
12000SR 80,160.00
15000SR 100,200.00
18000SR 120,240.00
21000SR 140,280.00
24000SR 160,320.00
27000SR 180,360.00
30000SR 200,400.00
33000SR 220,440.00
36000SR 240,480.00
39000SR 260,520.00
42000SR 280,560.00
45000SR 300,600.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

125 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Pin Count

8

Maximum Drain Source Resistance

0.0035 Ω, 0.00288 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more