Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C
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SR 18.90
Each (On a Reel of 1000) (ex VAT)
SR 21.735
Each (On a Reel of 1000) (inc. VAT)
1000
SR 18.90
Each (On a Reel of 1000) (ex VAT)
SR 21.735
Each (On a Reel of 1000) (inc. VAT)
1000
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C