Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
40 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
45
Transistor Configuration
Single
Maximum Collector Base Voltage
25 V dc
Maximum Emitter Base Voltage
8 V dc
Maximum Operating Frequency
10 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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SR 3.11
Each (In a Box of 500) (ex VAT)
SR 3.576
Each (In a Box of 500) (inc VAT)
500
SR 3.11
Each (In a Box of 500) (ex VAT)
SR 3.576
Each (In a Box of 500) (inc VAT)
500
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
40 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
45
Transistor Configuration
Single
Maximum Collector Base Voltage
25 V dc
Maximum Emitter Base Voltage
8 V dc
Maximum Operating Frequency
10 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China