Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20 x 5 x 26mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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SR 29.85
Each (In a Tube of 25) (ex VAT)
SR 34.328
Each (In a Tube of 25) (inc VAT)
25
SR 29.85
Each (In a Tube of 25) (ex VAT)
SR 34.328
Each (In a Tube of 25) (inc VAT)
25
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20 x 5 x 26mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.