Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-100 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
120 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.5 x 2.5 x 1.5mm
Country of Origin
China
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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SR 1.43
Each (On a Reel of 1000) (ex VAT)
SR 1.644
Each (On a Reel of 1000) (inc VAT)
1000
SR 1.43
Each (On a Reel of 1000) (ex VAT)
SR 1.644
Each (On a Reel of 1000) (inc VAT)
1000
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-100 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
120 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.5 x 2.5 x 1.5mm
Country of Origin
China
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.