Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
SR 75.00
SR 37.50 Each (In a Pack of 2) (ex VAT)
SR 86.25
SR 43.125 Each (In a Pack of 2) (inc. VAT)
Standard
2
SR 75.00
SR 37.50 Each (In a Pack of 2) (ex VAT)
SR 86.25
SR 43.125 Each (In a Pack of 2) (inc. VAT)
Standard
2
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Product details