Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
225 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
4
Package Type
AG-62MMHB
Configuration
Single Collector, Single Emitter, Single Gate
Mounting Type
Through Hole
Channel Type
N
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P.O.A.
Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
1
P.O.A.
Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
Stock information temporarily unavailable.
1
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
225 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
4
Package Type
AG-62MMHB
Configuration
Single Collector, Single Emitter, Single Gate
Mounting Type
Through Hole
Channel Type
N