Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

RS Stock No.: 165-5986Brand: InfineonManufacturers Part No.: BSC052N03LSATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Width

5.35mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

SR 8,350.00

SR 1.67 Each (On a Reel of 5000) (ex VAT)

SR 9,602.50

SR 1.92 Each (On a Reel of 5000) (inc. VAT)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1

5000

Available in multiples of 5000
5000SR 8,350.00
10000SR 16,700.00
15000SR 25,050.00
20000SR 33,400.00
25000SR 41,750.00
30000SR 50,100.00
35000SR 58,450.00
40000SR 66,800.00
45000SR 75,150.00
50000SR 83,500.00
55000SR 91,850.00
60000SR 100,200.00
65000SR 108,550.00
70000SR 116,900.00
75000SR 125,250.00

SR 8,350.00

SR 1.67 Each (On a Reel of 5000) (ex VAT)

SR 9,602.50

SR 1.92 Each (On a Reel of 5000) (inc. VAT)

Infineon OptiMOS™ N-Channel MOSFET, 57 A, 30 V, 8-Pin TDSON BSC052N03LSATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000SR 8,350.00
10000SR 16,700.00
15000SR 25,050.00
20000SR 33,400.00
25000SR 41,750.00
30000SR 50,100.00
35000SR 58,450.00
40000SR 66,800.00
45000SR 75,150.00
50000SR 83,500.00
55000SR 91,850.00
60000SR 100,200.00
65000SR 108,550.00
70000SR 116,900.00
75000SR 125,250.00

Stock information temporarily unavailable.

Please check again later.

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

57 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Width

5.35mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more