Technical Document
Specifications
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Maximum Operating Supply Voltage
3.65 V
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Country of Origin
Thailand
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Stock information temporarily unavailable.
Please check again later.
SR 25.90
Each (In a Pack of 2) (ex VAT)
SR 29.785
Each (In a Pack of 2) (inc VAT)
2
SR 25.90
Each (In a Pack of 2) (ex VAT)
SR 29.785
Each (In a Pack of 2) (inc VAT)
2
Technical Document
Specifications
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Maximum Operating Supply Voltage
3.65 V
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Country of Origin
Thailand
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.