Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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SR 67.40
SR 3.37 Each (In a Pack of 20) (ex VAT)
SR 77.51
SR 3.876 Each (In a Pack of 20) (inc. VAT)
Standard
20
SR 67.40
SR 3.37 Each (In a Pack of 20) (ex VAT)
SR 77.51
SR 3.876 Each (In a Pack of 20) (inc. VAT)
Standard
20
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Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products