Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008NBKW
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
SR 97.00
SR 0.97 Each (In a Pack of 100) (ex VAT)
SR 111.55
SR 1.116 Each (In a Pack of 100) (inc. VAT)
Standard
100
SR 97.00
SR 0.97 Each (In a Pack of 100) (ex VAT)
SR 111.55
SR 1.116 Each (In a Pack of 100) (inc. VAT)
Standard
100
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Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008NBKW
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Product details