Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Forward Diode Voltage
1.2V
Mounting Type
Surface Mount
Maximum Gate Threshold Voltage
1.2V
Maximum Drain Source Voltage
40 V
Maximum Operating Temperature
+150 °C
Maximum Gate Source Voltage
±12 V
Height
0.7mm
Maximum Power Dissipation
2 W
Width
1.8mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Length
2.9mm
Maximum Continuous Drain Current
2 A
Package Type
SOT-23
Maximum Drain Source Resistance
390 mΩ
Brand
ToshibaCountry of Origin
Thailand
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SR 0.52
Each (On a Reel of 3000) (ex VAT)
SR 0.598
Each (On a Reel of 3000) (inc VAT)
3000
SR 0.52
Each (On a Reel of 3000) (ex VAT)
SR 0.598
Each (On a Reel of 3000) (inc VAT)
3000
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Forward Diode Voltage
1.2V
Mounting Type
Surface Mount
Maximum Gate Threshold Voltage
1.2V
Maximum Drain Source Voltage
40 V
Maximum Operating Temperature
+150 °C
Maximum Gate Source Voltage
±12 V
Height
0.7mm
Maximum Power Dissipation
2 W
Width
1.8mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Length
2.9mm
Maximum Continuous Drain Current
2 A
Package Type
SOT-23
Maximum Drain Source Resistance
390 mΩ
Brand
ToshibaCountry of Origin
Thailand