N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

RS Stock No.: 171-3620Brand: Taiwan SemiconductorManufacturers Part No.: TSM3N80CH C5G
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Technical Document

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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SR 12.30

Each (On a Reel of 1875) (ex VAT)

SR 14.145

Each (On a Reel of 1875) (inc. VAT)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G

1875

Available in multiples of 1875
1875SR 23,062.50
3750SR 46,125.00
5625SR 69,187.50
7500SR 92,250.00
9375SR 115,312.50
11250SR 138,375.00
13125SR 161,437.50
15000SR 184,500.00
16875SR 207,562.50
18750SR 230,625.00
20625SR 253,687.50
22500SR 276,750.00
24375SR 299,812.50
26250SR 322,875.00
28125SR 345,937.50

SR 12.30

Each (On a Reel of 1875) (ex VAT)

SR 14.145

Each (On a Reel of 1875) (inc. VAT)

N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G
Stock information temporarily unavailable.

1875

Available in multiples of 1875
1875SR 23,062.50
3750SR 46,125.00
5625SR 69,187.50
7500SR 92,250.00
9375SR 115,312.50
11250SR 138,375.00
13125SR 161,437.50
15000SR 184,500.00
16875SR 207,562.50
18750SR 230,625.00
20625SR 253,687.50
22500SR 276,750.00
24375SR 299,812.50
26250SR 322,875.00
28125SR 345,937.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

800 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more