Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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SR 611.50
SR 12.23 Each (In a Tube of 50) (ex VAT)
SR 703.22
SR 14.064 Each (In a Tube of 50) (inc. VAT)
50
SR 611.50
SR 12.23 Each (In a Tube of 50) (ex VAT)
SR 703.22
SR 14.064 Each (In a Tube of 50) (inc. VAT)
50
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
100 V
Series
STripFET II
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
135 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.3mm
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.