Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Features
Positive temperaure co-efficient for easy parallel operation
High current capability
Low saturation voltage
High input impedance
Tightened parameter distribution
RS Product Codes
864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
Please check again later.
SR 35.38
Each (In a Tube of 30) (ex VAT)
SR 40.687
Each (In a Tube of 30) (inc. VAT)
30
SR 35.38
Each (In a Tube of 30) (ex VAT)
SR 40.687
Each (In a Tube of 30) (inc. VAT)
30
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
120 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
600 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.6 x 4.7 x 20.6mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Features
Positive temperaure co-efficient for easy parallel operation
High current capability
Low saturation voltage
High input impedance
Tightened parameter distribution
RS Product Codes
864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.