onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

RS Stock No.: 185-7999Brand: onsemiManufacturers Part No.: FGAF40S65AQ
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

94 W

Number of Transistors

1

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.7 x 5.7 x 24.7mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

2590pF

Maximum Operating Temperature

+175 °C

Energy Rating

325mJ

Country of Origin

Korea, Republic Of

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SR 13.66

Each (In a Tube of 360) (ex VAT)

SR 15.709

Each (In a Tube of 360) (inc. VAT)

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

SR 13.66

Each (In a Tube of 360) (ex VAT)

SR 15.709

Each (In a Tube of 360) (inc. VAT)

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
Stock information temporarily unavailable.

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JOIN FOR FREE

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

94 W

Number of Transistors

1

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.7 x 5.7 x 24.7mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

2590pF

Maximum Operating Temperature

+175 °C

Energy Rating

325mJ

Country of Origin

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more