N-Channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay SIR690DP-T1-RE3

RS Stock No.: 134-9729Brand: VishayManufacturers Part No.: SIR690DP-T1-RE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

34.4 A

Maximum Drain Source Voltage

200 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

31.9 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

SR 4.70

Each (In a Pack of 5) (ex VAT)

SR 5.405

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay SIR690DP-T1-RE3
Select packaging type

SR 4.70

Each (In a Pack of 5) (ex VAT)

SR 5.405

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay SIR690DP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

34.4 A

Maximum Drain Source Voltage

200 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.26mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

31.9 nC @ 10 V

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Product details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor