N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 onsemi NTP6412ANG
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Width
4.82mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
2
P.O.A.
2
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
13.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.28mm
Width
4.82mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
15.75mm
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products