N-Channel MOSFET, 23 A, 100 V, 3-Pin IPAK onsemi NTD6415AN-1G

RS Stock No.: 719-2917Brand: ON SemiconductorManufacturers Part No.: NTD6415AN-1G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

7.62mm

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P.O.A.

N-Channel MOSFET, 23 A, 100 V, 3-Pin IPAK onsemi NTD6415AN-1G

P.O.A.

N-Channel MOSFET, 23 A, 100 V, 3-Pin IPAK onsemi NTD6415AN-1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

29 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

7.62mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more