Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Length
10.63mm
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Length
10.63mm
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C