N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK onsemi NDD03N60ZT4G

RS Stock No.: 719-2796Brand: ON SemiconductorManufacturers Part No.: NDD03N60ZT4G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

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P.O.A.

N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK onsemi NDD03N60ZT4G
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P.O.A.

N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK onsemi NDD03N60ZT4G
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.38mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more