N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G

RS Stock No.: 719-2780Brand: ON SemiconductorManufacturers Part No.: NDD03N50Z-1G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

7.62mm

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G

P.O.A.

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

2.38mm

Transistor Material

Si

Height

7.62mm

Minimum Operating Temperature

-55 °C