N-Channel MOSFET, 2.4 A, 600 V, 3-Pin IPAK onsemi NDD02N60Z-1G

RS Stock No.: 719-2777Brand: ON SemiconductorManufacturers Part No.: NDD02N60Z-1G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

7.62mm

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

N-Channel MOSFET, 2.4 A, 600 V, 3-Pin IPAK onsemi NDD02N60Z-1G
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P.O.A.

N-Channel MOSFET, 2.4 A, 600 V, 3-Pin IPAK onsemi NDD02N60Z-1G
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.4 A

Maximum Drain Source Voltage

600 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Width

2.38mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

7.62mm

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor