N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 onsemi FDMS86183

RS Stock No.: 146-3370Brand: onsemiManufacturers Part No.: FDMS86183
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

5.85mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.05mm

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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SR 3.87

Each (On a Reel of 3000) (ex VAT)

SR 4.45

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 onsemi FDMS86183

3000

Available in multiples of 3000
3000SR 11,610.00
6000SR 23,220.00
9000SR 34,830.00
12000SR 46,440.00
15000SR 58,050.00
18000SR 69,660.00
21000SR 81,270.00
24000SR 92,880.00
27000SR 104,490.00
30000SR 116,100.00
33000SR 127,710.00
36000SR 139,320.00
39000SR 150,930.00
42000SR 162,540.00
45000SR 174,150.00

SR 3.87

Each (On a Reel of 3000) (ex VAT)

SR 4.45

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 onsemi FDMS86183
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000SR 11,610.00
6000SR 23,220.00
9000SR 34,830.00
12000SR 46,440.00
15000SR 58,050.00
18000SR 69,660.00
21000SR 81,270.00
24000SR 92,880.00
27000SR 104,490.00
30000SR 116,100.00
33000SR 127,710.00
36000SR 139,320.00
39000SR 150,930.00
42000SR 162,540.00
45000SR 174,150.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

5.85mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.05mm

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more